原厂代理NCE2309新洁能60V p通道增强模式功率MOSFE场效应管

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NCE2309NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE2309 uses advanced trench technology and design to

provide excellent RDS(ON) with low gate charge .This device is

well suited for use as a load switch or in PWM applications. General Features

VDS =-60V,ID =-1.6A

RDS(ON) <160mΩ @ vgs=-10v

RDS(ON) <200mΩ @ vgs=-4.5v

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Excellent package for good heat dissipation

Application

Load switch

PWM application