国产双通道5A高速低侧栅较驱动器芯片 MD18624NAA茂睿芯 封装SOP-8

1 DESCRIPTION The MD18624N high-frequency gate driver is designed to drive both low-side N-Channel MOSFETs with maximum control flexibility of independent inputs. Each channel can source and sink 5A peak current along with rail-to-rail output capability. Lessthan 10nsrise and fall time with 2.2nF load decrease the switching loss of MOSFET. MD18624N has 11ns rising and falling propagation delay which allows the systems operating at high frequency with less delay matching variations. These delays are very suited for applications requiring dual-gate drivers with critical timing, such as synchronous rectifiers. When connecting two channels in parallel to increase current-drive capability, intelligent stack detection circuit is implemented to add extra 5ns dead-time between the two channels to avoid shoot through current without adding external series resistor. The inputs can handle -10V to 20V PWM, which increases robustness against ringing from gate transformer and/or parasitic inductance of long routing traces. The input PINs thresholds are fixed and independent of the VDD supply voltage. The MD18624N is offered in SOP-8 package。

FEATURES

4.5V to 26V VDD Operating Range, 28V ABS MAX

Input Pins Can Tolerate -10V to +26V, and are Independent of Supply Voltage Range

Operating Switching Frequency up to 1MHz

5-A Source and Sink Output Peak Currents

Less than 10ns Rise and Fall Time with 2.2nF Load

Fast Propagation Delay (11ns Typical)

Excellent Propagation Delay Matching (1ns Typical)

TTL and CMOS Compatible Inputs

Symmetrical Undervoltage Lockout for Channel A and Channel B

Industry-standard-compatible Pinout

Available in SOP-8 Package

Specified from -40°C to 140°C